any changing of specification will not be informed individual pzt 158 npn transistor silicon planar high current transistor r o h s c o m p l i a n t p r o d u c t h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e t h e p z t 1 5 8 i s d e s i g n e d f o r g e n e r a l p u r p o s e s w i t c h i n g a n d a m p l i f i e r a p p l i c a t i o n s . d e s c r i p t i o n * 6 a m p s c o n t i n o u s c u r r e n t , u p t o 2 0 a m p s p e a k c u r r e n t * e x c e l l e n t g a i n c h a r a c t e r i s t i c , s p e c i f i e d u p t o 1 0 a m p s * v e r y l o w s a t u r a t i o n v o l t a g e s f e atures e l e c t r i c a l c h a r a c t e r i s t i c s ta m b = 2 5 unless otherwise specified m a x i m u m r a t i n g s * ( t a m b = 2 5 , u n l e s s o t h e r w i s e s p e c i f i e d ) c o s y m b o l p a r a m e t e r v a l u e c o l l e c t o r c u r r e n t (dc) 20 i c t s t g t j , j u n c t i o n a n d t o t a l p o w e r d i s s i p a t i o n v e b o p d e m i t t e r - b a s e v o l t a g e 6 3 v a w s t o r a g e t e m p e r a t u r e - 5 5 ~ - 1 5 0 c o v c e o c o l l e c t o r - e m i t t e r v o l t a g e 6 0 v v c b o c o l l e c t o r - b a s e v o l t a g e 1 50 v u n i t s c o l l e c t o r c u r r e n t (pulse) 6 sot-223 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 2 ref. min. max. ref. min. max. a 6.70 7.30 b 13 c typ. c 2.90 3.10 j 2.30 ref. d 0.02 0.10 1 6.30 6.70 e 0 c 10 c 2 6.30 6.70 i 0.60 0.80 3 3.30 3.70 h 0.25 0.35 4 3.30 3.70 5 1.40 1.80 1 5 8 d a t e c o d e b c e *the power which can be dissipated assuming the device is mounted in a typical on a p.c.b. with copper equal to 4 square inch min.. p a r a m e t e r s y m b o l m i n t y p . m a x u n i t e s t c o n d i t i o n s c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e b v c b o 1 5 0 - - v i c = 1 0 0 m a , i e = 0 i c = 1 0 m a , i b = 0 i e = 1 0 0 m a , i c = 0 v c b = 1 2 0 v , i e = 0 v c e s = 6 0 v v e b = 6 v , i c = 0 i c = 1 0 0 m a , i b = 5 m a i c = 1 a , i b = 5 0 m a i c = 2 a , i b = 5 0 m a i c = 6 a , i b = 3 0 0 m a i c = 6 a , i b = 3 0 0 m a v c e = 1 v , i c = 6 a v c e = 1 v , i c = 1 0 m a v c e = 1 v , i c = 2 a v c e = 1 v , i c = 5 a v c e = 1 v , i c = 1 0 a v c e = 1 0 v , i c = 1 0 0 m a , v c b = 1 0 v , i e = 0 , f = 1 m h z , f = 5 0 m h z v c c = 1 0 v , i c = 1 a , i b 1 = i b 2 = 1 0 0 m a * b v c e o 6 0 - - v b v e b o 6 - - v i c b o - - 5 0 n a i c e s - - 5 0 n a i e b o - - 1 0 n a * v c e ( s a t ) 1 - 5 0 * v c e ( s a t ) 2 - 1 0 0 m v * v c e ( s a t ) 3 - 1 7 0 * v c e ( s a t ) 4 - 3 7 5 * v b e ( s a t ) - 1 . 2 v * v b e ( o n ) - 1 . 1 5 v * h f e 1 1 0 0 - * h f e 2 1 0 0 2 0 0 3 0 0 * h f e 3 7 5 - * h f e 4 2 5 - f t - 1 3 0 - m h c o b - 4 5 - p f t o n t o f f - - - 4 5 1 1 0 0 - - - - - - - - - - z n s c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e e m i t t e r - b a s e b r e a k d o w n v o l t a g e c o l l e c t o r - b a s e c u t o f f c u r r e n t c o l l e c t o r - b a s e c u t o f f c u r r e n t e m i t t e r - b a s e c u t o f f c u r r e n t c o l l e c t o r s a t u r a t i o n v o l t a g e b a s e s a t u r a t i o n v o l t a g e b a s e - e m i t t e r v o l t a g e d c c u r r e n t g a i n g a i n - b a n d w i d t h p r o d u c t o u t p u t c a p a c i t a n c e o n - t i m e o f f - t i m e c o * m easu r e d u n d er p u l s e c o n d i t i o n . p u l se w i d t h 300 s , du ty cy c l e 2% s p i ce p ar a met er d at a i s av ai l ab l e u p o n r e q u est f o r t h i s d ev i ce .
pzt 158 np n transistor silicon planar high current transistor elektronische bauelemente any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-2002 rev. a page 2 of 2 characteristic curves
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